Imaging device and drive method therefor

ABSTRACT

An imaging device includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer that generates a signal charge; a charge accumulator connected to the first electrode to accumulate the signal charge; a first voltage supply circuit connected to the second electrode and that selectively supplies at least two different voltages including a first voltage and a third voltage greater than the first voltage; and a second voltage supply circuit that is connected to the charge accumulator via capacitance and that selectively supplies at least two different voltages including a second voltage and a fourth voltage less than the second voltage, where in a first period in which the first voltage supply circuit supplies the first voltage, the first period being included in an accumulation period for accumulating the signal charge in the charge accumulator, the second voltage supply circuit supplies the second voltage.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.17/005,240, filed on Aug. 27, 2020, which claims priority to JapanesePatent Application No. 2019-176061, filed on Sep. 26, 2019, the entirecontents of each of which are incorporated herein by reference.

BACKGROUND 1. Technical Field

The present disclosure relates to an imaging device and a drive methodtherefor.

2. Description of the Related Art

Japanese Unexamined Patent Application Publication No. 2007-104114discloses an imaging element in which a photosensitive layer, which is aphotoelectric conversion layer, is stacked on a substrate. In thetechnology disclosed in Japanese Unexamined Patent ApplicationPublication No. 2007-104114, the photosensitive layer is sandwichedbetween a pixel electrode layer and an opposing electrode layer. Thepulse width of a pulsed voltage applied between the pixel electrodelayer and the opposing electrode layer is adjusted to performsensitivity control in the photosensitive layer.

Japanese Unexamined Patent Application Publication No. 2017-216743discloses an imaging device that can realize a global shutter function.In the technology disclosed in Japanese Unexamined Patent ApplicationPublication No. 2017-216743, the sensitivity is controlled using avoltage applied between a pixel electrode and an opposing electrode.

SUMMARY

In one general aspect, the techniques disclosed here feature an imagingdevice comprising: a photoelectric converter that includes a firstelectrode, a second electrode, and a photoelectric conversion layerbetween the first electrode and the second electrode and that generatesa signal charge; a charge accumulator that is connected to the firstelectrode to accumulate the signal charge; a first voltage supplycircuit that is connected to the second electrode and that selectivelysupplies at least two different voltages including a first voltage and athird voltage greater than the first voltage; and a second voltagesupply circuit that is connected to the charge accumulator viacapacitance and that selectively supplies at least two differentvoltages including a second voltage and a fourth voltage less than thesecond voltage, wherein in a first period in which the first voltagesupply circuit supplies the first voltage, the first period beingincluded in an accumulation period for accumulating the signal charge inthe charge accumulator, the second voltage supply circuit supplies thesecond voltage.

It should be noted that general or specific embodiments may beimplemented as a system, a method, an integrated circuit, a computerprogram, a storage medium, or any selective combination thereof.

Additional benefits and advantages of the disclosed embodiments willbecome apparent from the specification and drawings. The benefits and/oradvantages may be individually obtained by the various embodiments andfeatures of the specification and drawings, which need not all beprovided in order to obtain one or more of such benefits and/oradvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a block diagram illustrating a configuration example of animaging device according to a first embodiment;

FIG. 1B is a diagram illustrating an equivalent circuit of aphotoelectric converter in FIG. 1A;

FIG. 2 is a block diagram illustrating a configuration example of asecond voltage supply circuit and pixel cells according to the firstembodiment;

FIG. 3 is a schematic diagram illustrating one example of a section ofone pixel cell according to the first embodiment;

FIG. 4 is a block diagram illustrating one example of a photocurrentcharacteristic of the photoelectric converter according to the firstembodiment;

FIG. 5A is a time chart illustrating a reading operation example of theimaging device according to the first embodiment;

FIG. 5B is a time chart illustrating an operation example of the imagingdevice according to the first embodiment;

FIG. 6 is a time chart illustrating an operation example of an imagingdevice according to a comparative example;

FIG. 7 is a time chart illustrating an operation example of the imagingdevice according to the first embodiment;

FIG. 8 is a time chart illustrating an operation example of an imagingdevice according to a modification of the first embodiment;

FIG. 9A is a view schematically illustrating images acquired by theimaging device according to the comparative example;

FIG. 9B is a view schematically illustrating images acquired by theimaging device according to the first embodiment;

FIG. 10 is a time chart illustrating an operation example of an imagingdevice according to a second embodiment;

FIG. 11 is a time chart illustrating an operation example of an imagingdevice according to a comparative example;

FIG. 12 is a time chart illustrating an operation example of the imagingdevice according to the second embodiment;

FIG. 13 is a time chart illustrating an operation example of an imagingdevice according to a third embodiment;

FIG. 14 is a time chart illustrating an operation example of an imagingdevice according to a comparative example;

FIG. 15 is a time chart illustrating an operation example of the imagingdevice according to the third embodiment;

FIG. 16 is a block diagram illustrating a configuration example of animaging device according to a fourth embodiment;

FIG. 17A is a block diagram illustrating an arrangement example of aneffective-pixel region and an ineffective-pixel region according to thefourth embodiment;

FIG. 17B is a block diagram illustrating another arrangement example ofthe effective-pixel region and the ineffective-pixel region according tothe fourth embodiment;

FIG. 18A is a diagram illustrating a reading operation example of theeffective-pixel region and the ineffective-pixel region according to thefourth embodiment;

FIG. 18B is a diagram illustrating a reading operation example of theeffective-pixel region and the ineffective-pixel region according to thefourth embodiment; and

FIG. 19 is a diagram illustrating an example of the timing of changing avoltage at an opposing electrode according to the fourth embodiment.

DETAILED DESCRIPTION

(Findings that LED to One Aspect of Present Disclosure)

As disclosed in Japanese Unexamined Patent Application Publication No.2007-104114, the sensitivity can be controlled by applying a pulsedvoltage between a pixel electrode and an opposing electrode andperforming duty-ratio control thereof.

Specifically, for example, a pulsed voltage is applied to the opposingelectrode to perform duty-ratio control. That is, a high voltage and alow voltage are alternately applied to the opposing electrode to changethe ratio of the length of a period in which a high voltage is appliedversus the length of a period in which a low voltage is applied. Thismakes it possible to change the sensitivity. In such sensitivitycontrol, for example, when a period in which the high voltage is appliedto the opposing electrode is increased to set the sensitivity to highsensitivity, performing reading and resetting in the period in which thehigh voltage is applied to the opposing electrode makes it easier toensure the amount of time required for the reading and the resetting.Conversely, when the period in which the low voltage is applied to theopposing electrode is increased to set the sensitivity to lowsensitivity, performing the reading and resetting in the period in whichthe low voltage is applied to the opposing electrode makes it easier toensure the amount of time required for the reading and the resetting.That is, it is desirable that whether the reading and the resetting areperformed when the potential at the opposing electrode is a high voltageor when the potential at the opposing electrode is a low voltage beselected for each frame in accordance with the duty ratio of the pulsedvoltage.

The present inventors have found that a phenomenon in which thebrightness of an acquired image changes significantly occurs in a frameimmediately after changing whether the reading and the resetting areperformed when the potential at the opposing electrode is a high voltageor when the potential at the opposing electrode is a low voltage.

According to study conducted by the inventors, owing to capacitivecoupling between the opposing electrode and a pixel electrode, thepotential at the pixel electrode changes upon a potential change at theopposing electrode, which causes the above-described phenomenon. Adetailed description is given later.

Also, a potential change at the pixel electrode which occurs upon apotential change at the opposing electrode causes the intensity of anelectric field, formed between the opposing electrode and the pixelelectrode, to change in an exposure period. Thus, the potential changeat the opposing electrode can also affect the maximum sensitivity andthe amount of saturated charge.

Also, when an impurity region for accumulating signal charge is providedat a semiconductor substrate, a potential change at the pixel electrodewhich occurs upon a potential change at the opposing electrode causes achange in a potential difference between the impurity region and aregion adjacent to the impurity region. Thus, the potential change atthe opposing electrode can cause leakage of signal charge accumulated inthe impurity region.

As described above, performing control for changing the potential at theopposing electrode can cause a problem that image-quality deteriorationcan occur.

Accordingly, the present disclosure provides an imaging device thatreduces image-quality deterioration due to a potential change at anopposing electrode and a drive method for the imaging device.

An imaging device according to one aspect of the present disclosureincludes: a photoelectric converter that includes a first electrode, asecond electrode, and a photoelectric conversion layer between the firstelectrode and the second electrode and that generates signal chargethrough photoelectric conversion; a capacitor having a first terminaland a second terminal, the first terminal being connected to the firstelectrode; a first voltage supply circuit that selectively supplies atleast two different voltages to the second electrode; and a secondvoltage supply circuit that selectively supplies at least two differentvoltages to the second terminal.

According to this aspect, it is possible to control a potentialvariation at the first electrode which occurs upon a potential change atthe second electrode, which is an opposing electrode, and it is possibleto reduce image-quality deterioration that is caused by a potentialchange at the opposing electrode.

In a predetermined period in each of a plurality of frames, the firstvoltage supply circuit supplies one of a plurality of voltages includinga first voltage and a third voltage to the second electrode, the thirdvoltage being higher than the first voltage. In the predeterminedperiod, when the first voltage supply circuit supplies the first voltageto the second electrode, the second voltage supply circuit may supply asecond voltage to the second terminal; and in the predetermined period,when the first voltage supply circuit supplies the third voltage to thesecond electrode, the second voltage supply circuit may supply a fourthvoltage to the second terminal, the fourth voltage being lower than thesecond voltage.

According to this aspect, even when each of the first voltage supplycircuit and the second voltage supply circuit supplies three voltagelevels, it is possible to reduce potential variations at the firstelectrode which occur upon potential switching at the second electrode.

The plurality of voltages may further include a fifth voltage that ishigher than the first voltage and that is lower than the third voltage;and in the predetermined period, when the first voltage supply circuitsupplies the fifth voltage to the second electrode, the second voltagesupply circuit may supply a sixth voltage to the second terminal, thesixth voltage being lower than the second voltage and being higher thanthe fourth voltage.

According to this aspect, since the voltage of the second voltage supplycircuit has an opposite phase relationship with the voltage of the firstvoltage supply circuit, it is possible to cancel or reduce voltagevariations at a charge accumulation node which are caused by a voltageat the opposing electrode. As a result, it is possible to reduceimage-quality deterioration caused by a potential change at the opposingelectrode.

The predetermined period may include a period for reading a signalcorresponding to a potential at the first electrode.

According to this aspect, in a period for reading a pixel signal, it ispossible to reduce potential variations at the first electrode whichoccur upon potential switching at the second electrode, which is anopposing electrode.

The predetermined period may include a period for resetting a potentialat the first electrode.

According to this aspect, in a period for reading a pixel signal andreading a reference potential, it is possible to reduce potentialvariations at the first electrode which occur upon potential switchingat the second electrode (i.e., an opposing electrode).

The imaging device may further include a first transistor having a gateconnected to the first electrode, and the predetermined period mayinclude a period in which the first transistor outputs a signalcorresponding to a potential at the first electrode.

According to this aspect, in a period in which a first signalcorresponding to signal charge is output from the first transistor, itis possible to reduce potential variations at the first electrode whichoccur upon potential switching at the second electrode.

The imaging device may further include a second transistor having asource or a drain connected to one of a source and a drain of the firsttransistor, and the predetermined period may include a period in whichthe second transistor turns on.

According to this aspect, in the period in which the second transistorturns on, it is possible to reduce potential variations at the firstelectrode which occur upon potential switching at the second electrode.

The imaging device may further include a charge accumulator that isconnected to the first electrode to accumulate the signal charge, and inan accumulation period in which the signal charge is accumulated in thecharge accumulator, the first voltage supply circuit may alternatelysupply the first voltage and the third voltage to the second electrode.

According to this aspect, the sensitivity of the photoelectric convertercan be set according to the ratio of the first voltage versus the thirdvoltage that are alternately generated.

The imaging device may further include a charge accumulator that isconnected to the first electrode to accumulate the signal charge, and ina period in which the first voltage supply circuit supplies the thirdvoltage to the second electrode, the period being included in anaccumulation period for accumulating the signal charge in the chargeaccumulator, the second voltage supply circuit may supply the fourthvoltage to the second terminal.

According to this aspect, in a mode in which reading is performed whenthe voltage at the opposing electrode is the first voltage, which has alow level, it is possible to suppress or reduce a sensitivity decreaseand a saturation decrease.

The imaging device may further include a charge accumulator that isconnected to the first electrode to accumulate the signal charge, and ina period in which the first voltage supply circuit supplies the firstvoltage to the second electrode, the period being included in anaccumulation period for accumulating the signal charge in the chargeaccumulator, the second voltage supply circuit may supply the secondvoltage to the second terminal.

The signal charge may be a hole; and when the first voltage is suppliedto the second electrode, the photoelectric converter does notnecessarily have to have sensitivity to incident light. That is, thesensitivity of the photoelectric converter to incident light when thefirst voltage is supplied to the second electrode may be substantiallyzero.

The signal charge may be an electron; and when the third voltage issupplied to the second electrode, the photoelectric converter does notnecessarily have to have sensitivity to incident light. That is, thesensitivity of the photoelectric converter to incident light when thethird voltage is supplied to the second electrode may be substantiallyzero.

The imaging device may further include a plurality of pixels arranged ina matrix having a plurality of rows and a plurality of columns. Each ofthe pixels may include the photoelectric converter and the capacitor;and the second voltage supply circuit may selectively supply, for eachrow included in the plurality of rows, the at least two differentvoltages to the second terminal.

According to this aspect, the second voltage supply circuit can performvoltage supply for each row, thus making it possible to reduceimage-quality deterioration caused by a potential change at the opposingelectrode.

The plurality of pixels may include an effective pixel that outputs asignal corresponding to an amount of incident light and an ineffectivepixel that outputs an optical black level; and in a period for reading asignal of the effective pixel in each of the frames, the first voltagesupply circuit may supply one of the plurality of voltages including thefirst voltage and the third voltage to the second electrode. In theperiod for reading a signal of the effective pixel in each of theframes, the first voltage supply circuit does not necessarily have tochange the voltage supplied to the second electrode.

According to this aspect, in an effective-pixel reading period, it ispossible to suppress or reduce pixel signal variations that occur due tovoltage variations at the opposing electrode (i.e., the secondelectrode). This makes it possible to suppress or reduce animage-quality decline.

A drive method according to another aspect of the present disclosure isa drive method for an imaging device that includes: a photoelectricconverter that includes a first electrode, a second electrode, and aphotoelectric conversion layer between the first electrode and thesecond electrode and that generates signal charge through photoelectricconversion; and a capacitor having a first terminal and a secondterminal, the first terminal being connected to the first electrode. Thedrive method includes: supplying one of a plurality of voltagesincluding a first voltage and a third voltage to the second electrode ina predetermined period in each of a plurality of frames, the thirdvoltage being higher than the first voltage; supplying a second voltageto the second terminal when the first voltage is supplied to the secondelectrode in the predetermined period; and supplying a fourth voltage tothe second terminal when the third voltage is supplied to the secondelectrode in the predetermined period, the fourth voltage being lowerthan the second voltage.

According to this aspect, in a mode in which reading is performed whenthe voltage at the opposing electrode is the third voltage, which has ahigh level, increasing the potential at the charge accumulation node inan accumulation period makes it possible to prevent the potential at thecharge accumulation node in a reading period from becoming smaller thanor equal to the reference potential. This makes it possible suppress orreduce an image-quality decline due to waveform deformation ordeterioration of pixel signals.

Embodiments will be described below with reference to the accompanyingdrawings. The embodiments described below each represent a general orspecific example. Numerical values, shapes, materials, constituentelements, the arrangement positions and connection forms of theconstituent elements, steps, the order of the steps, and so on describedin the embodiments are examples and are not intended to limit thepresent disclosure. Implementations of the present disclosure are notlimited to the appended independent claims and may also be realized byanother independent claim.

The accompanying drawings are schematic diagrams and are not necessarilystrictly depicted. Also, in each figure, substantially the same elementsare denoted by the same reference numerals, and a redundant descriptionmay be omitted or is briefly given herein. In the present disclosure,all or a part of circuits, units, devices, parts, or portions or all ora part of functional blocks in the block diagrams can be implemented by,for example, one or more electronic circuits including a semiconductordevice, a semiconductor integrated circuit (IC), or a large-scaleintegration (LSI). The LSI or IC can be integrated into one chip or alsomay be a combination of a plurality of chips. For example, functionalblocks other than a storage device may be integrated into one chip.Although the name used here is an LSI or IC, it may also be called asystem LSI, a very large-scale integration (VLSI), or an ultralarge-scale integration (ULSI) depending on the degree of integration. Afield programmable gate array (FPGA) that can be programmed aftermanufacturing an LSI or a reconfigurable logic device that allowsreconfiguration of the connection relationship inside the LSI or setupof circuit cells inside the LSI can also be used for the same purpose.

In addition, the functions or operations of all or a part of thecircuits, units, devices, parts, or portions can be implemented byexecuting software. In such a case, the software is recorded on one ormore non-transitory recording media, such as a read-only memory (ROM),an optical disk, or a hard disk drive, and when the software is executedby a processor, the software causes the processor together withperipheral devices to execute the functions specified in the software. Asystem or apparatus may include such one or more non-transitoryrecording media on which the software is recorded and a processortogether with necessary hardware devices such as an interface.

First Embodiment [1.1 Circuit Configuration of Imaging Device]

FIG. 1A is a block diagram illustrating a configuration example of animaging device according to a first embodiment.

An imaging device 100 illustrated in FIG. 1A includes a plurality ofpixel cells 10, a vertical scanning circuit 20, a first voltage supplycircuit 30, column signal processing circuits 40 for respective columns,and an output selection circuit 41. FIG. 1A also illustrates verticalsignal lines 19 for the respective columns, second voltage supply lines25 for respective rows, reset control signal lines 26 for the respectiverows, selection control signal lines 27 for the respective rows, and afirst voltage supply line 35 that is common to all the pixel cells 10.

The pixel cells 10 are arranged in a matrix to form a two-dimensionalimaging region.

Each pixel cell 10 includes a photoelectric converter 11, a chargeaccumulation node FD, a capacitor CA, a reset transistor 2, anamplifying transistor 3, and an address transistor 4.

The photoelectric converter 11 includes a pixel electrode 12, anopposing electrode 13, and a photoelectric conversion layer 14 betweenthe pixel electrode 12 and the opposing electrode 13. The pixelelectrode 12 corresponds to the above-described first electrode. Also,the opposing electrode 13 corresponds to the above-described secondelectrode.

The photoelectric conversion layer 14 corresponds to portions that areincluded in a photoelectric conversion film, such as an organic layer,that covers the entire imaging region and that correspond to the pixelcells 10.

The pixel electrode 12 has an area corresponding to the occupation areaof the corresponding pixel cell 10 in plan view of the imaging regionand is an electrode for collecting signal charge generated in thephotoelectric conversion layer 14.

The opposing electrode 13 corresponds to portions that are included in atransparent electrode that covers a surface of the photoelectricconversion layer on which incident light is incident and that correspondto the pixel cells 10. A voltage Vito is supplied to the opposingelectrode 13 from the first voltage supply circuit 30 through the firstvoltage supply line 35. The voltage Vito is used in order to control thesensitivity of the photoelectric converters 11 and is common to all thepixel cells 10. At least two different voltages are selectively suppliedas the voltage Vito. Hereinafter, a low level and a high level areassumed to be selectively set for the voltage Vito. Also, the low-levelvoltage of the voltage Vito is referred to as a “voltage V1”, and thehigh-level voltage of the voltage Vito is referred to as a “voltage V3”.The voltage V1 corresponds to the above-described first voltage. Also,the voltage V3 corresponds to the above-described third voltage.

The charge accumulation node FD functions as a charge accumulator inwhich signal charge collected by the pixel electrode 12 is accumulated.For example, the charge accumulation node FD may include a diffusionlayer that is an impurity region provided at a semiconductor substrateor may include a capacitor. The charge accumulation node FD is alsoreferred to as a “floating diffusion node (FD node)”.

Each capacitor CA has a first terminal 17 and a second terminal 18. Thefirst terminal 17 is connected to the pixel electrode 12. The capacitorCA has a function for cancelling or reducing voltage variations at thecharge accumulation node FD which are caused by the voltage Vito. Thus,a voltage VA for cancelling or reducing the voltage variations issupplied from a second voltage supply circuit 21 to each second terminal18. The voltage VA is used for cancelling or reducing the voltagevariations at the charge accumulation node FD which are cause by thevoltage Vito and selectively has two values, that is, a low level and ahigh level, with respect to the voltage Vito, which has two values.Hereinafter, the high-level voltage of the voltage VA may be referred toas a “voltage V2”, and the low-level voltage of the voltage VA may bereferred to as a “voltage V4”. The voltage V2 corresponds to theabove-described second voltage. Also, the voltage V4 corresponds to theabove-described fourth voltage.

The reset transistor 2 is a switching transistor that resets thepotential at the charge accumulation node FD to a reference potential inaccordance with a reset control signal Vrst input to a gate connected tothe reset control signal line 26.

The amplifying transistor 3 constitutes a source follower circuit thatoutputs a potential at a gate, connected to the charge accumulation nodeFD, via a source as a pixel signal. The amplifying transistor 3corresponds to the above-described first transistor.

The address transistor 4 is a switching transistor that is turned on andoff in accordance with a selection control signal VseI (or an addresssignal) input to a gate connected to the selection control signal line27. When the address transistor 4 is on, the pixel signal from theamplifying transistor 3 is output to the vertical signal line 19. Theaddress transistor 4 corresponds to the above-described secondtransistor.

The vertical scanning circuit 20 scans the pixel cells 10 for each rowto control reset and selection for each row. To this end, the verticalscanning circuit 20 is connected to the second voltage supply lines 25,the reset control signal lines 26, and the selection control signallines 27 provided for the respective rows and outputs the voltage VA,the reset control signal Vrst, and the selection control signal VseI toeach row. The vertical scanning circuit 20 has the second voltage supplycircuit 21.

The second voltage supply circuit 21 selectively supplies at least twodifferent voltages to the second terminal 18 of each capacitor CA. FIG.2 is a block diagram illustrating a configuration example of the secondvoltage supply circuit 21 and the pixel cells 10 according to the firstembodiment. As illustrated in FIG. 2, the second voltage supply circuit21 is connected to the second voltage supply lines 25 provided for therespective rows and selectively supplies the voltage V2, which has ahigh level, and the voltage V4, which has a w level, as the voltage VAfor each row.

The first voltage supply circuit 30 selectively supplies the at leasttwo different voltages Vito to the opposing electrode 13 through thefirst voltage supply line 35. Since the opposing electrode 13corresponds to portions that are included in a transparent electrodethat covers a surface of the photoelectric conversion layer and thatcorrespond to the pixel cells 10, the voltage Vito supplied by the firstvoltage supply circuit 30 is common to all the pixel cells 10 and is avoltage for controlling the sensitivity of the photoelectric converters11. Herein, the voltage Vito is assumed to be set to one of the voltagesV1 and V3. In this case, the sensitivity is controlled according to theratio of the time in which the voltage V1 is applied and the time inwhich the voltage V3 is applied, that is, a duty ratio. For example,when the voltage V1 corresponds to low sensitivity, for example, zerosensitivity, and the voltage V3 corresponds to high sensitivity, thesensitivity can be set continuously or step-by-step from the zerosensitivity to the high sensitivity according to the aforementioned dutyratio. Also, when the voltage V1 corresponds to zero sensitivity, thestate in which the voltage V1 is applied corresponds to a state in whicha shutter in the electronic shutter function is closed.

The column signal processing circuits 40 are provided for the respectivecolumns. The column signal processing circuits 40 process signals outputfrom the pixel cells 10 in the row, selected by the vertical scanningcircuit 20, through the vertical signal lines 19. Pixel signalscorresponding to the amounts of signal charges accumulated in the chargeaccumulation nodes FD in the pixel cells 10 and reference signalsindicating reference potentials or reset levels are output from thepixel cells 10. The column signal processing circuits 40 performcorrelated double sampling (CDS), analog-to-digital conversion, and soon.

The output selection circuit 41 selectively outputs signals, output fromthe column signal processing circuits 40 for the respective columns viaan output terminal 42. [1.2 Device Structure of Pixel Cells 10]

Next, the configuration of the pixel cells 10 formed as a semiconductordevice will be described with reference to a sectional view thereof.

FIG. 3 is a schematic diagram illustrating one example of a section ofone pixel cell 10 according to the first embodiment. In theconfiguration illustrated in FIG. 3, the reset transistor 2, theamplifying transistor 3, and the address transistor 4, which aredescribed above, are formed at a semiconductor substrate 7. Thesemiconductor substrate 7 is not limited to a substrate that is entirelymade of semiconductor. The semiconductor substrate 7 may be, forexample, an insulating substrate having a semiconductor layer providedon its surface at which a photosensitive region is formed. Herein, adescription will be given of an example in which a p-type siliconsubstrate is used as the semiconductor substrate 7.

The semiconductor substrate 7 has impurity regions (in this case, n-typeregions) 4 d, 3 s, 3 d, 2 d, and 2 s and an element isolation region 9for providing electrical isolation between the pixel cells 10. Herein,an element isolation region 9 is also provided between the impurityregion 3 s and the impurity region 2 d. The element isolation regions 9are formed, for example, by performing ion-implantation of acceptorsunder a predetermined implantation condition.

The impurity regions 4 d, 3 s, 3 d, 2 d, and 2 s are typically diffusionlayers formed in the semiconductor substrate 7. As schematicallyillustrated in FIG. 3, the amplifying transistor 3 incudes the impurityregions 3 s and 3 d and a gate electrode 3 g. The gate electrode 3 g istypically a polysilicon electrode. The impurity region 3 s serves as,for example, a source region of the amplifying transistor 3. Theimpurity region 3 d serves as, for example, a drain region of theamplifying transistor 3. A channel region of the amplifying transistor 3is formed between the impurity regions 3 s and 3 d.

Similarly, the address transistor 4 includes the impurity regions 4 dand 3 d and a gate electrode 4 g connected to the correspondingselection control signal line 27. In this example, the amplifyingtransistor 3 and the address transistor 4 share the impurity region 3 dand are thus electrically connected to each other. The impurity region 4d serves as, for example, a drain region of the address transistor 4.The impurity region 4 d is connected to the vertical signal line 19illustrated in FIG. 1A.

The reset transistor 2 includes the impurity regions 2 d and 2 s and agate electrode 2 g connected to a reset control line 48. The impurityregion 2 s serves as, for example, a source region of the resettransistor 2. The gate electrode 2 g is connected to the reset controlsignal line 26 illustrated in FIG. 1A.

An interlayer insulating layer 8 is disposed on the semiconductorsubstrate 7 so as to cover the amplifying transistor 3, the addresstransistor 4, and the reset transistor 2. As illustrated in FIG. 3,wiring layers 56 can be disposed in the interlayer insulating layer 8.The wiring layers 56 are typically formed of metal, such as copper, andmay include, for example, wires, such as the vertical signal line 19described above. The number of insulating layers included in theinterlayer insulating layer 8 and the number of wiring layers 56disposed in the interlayer insulating layer 8 can be arbitrary set andare not limited to the example illustrated in FIG. 3.

The photoelectric converter 11 described above is disposed on theinterlayer insulating layer 8. In other words, in the embodiment of thepresent disclosure, the plurality of pixel cells 10, which constitutethe imaging region, is formed on the semiconductor substrate 7. Theplurality of pixel cells 10 that is two-dimensionally arrayed on thesemiconductor substrate 7 forms a pixel region, which is aphotosensitive region. The pixel pitch, which is the distance betweentwo adjacent pixel cells 10, may be, for example, about 2 μm.

The photoelectric converter 11 includes the pixel electrode 12, theopposing electrode 13, and the photoelectric conversion layer 14disposed therebetween. In this example, the opposing electrode 13 andthe photoelectric conversion layer 14 are formed across the plurality ofpixel cells 10. The pixel electrode 12 is provided in each pixel cell10, is spatially isolated from the pixel electrodes 12 in other pixelcells 10 that are adjacent thereto, and is thus electrically isolatedfrom the pixel electrodes 12 in the other pixel cells 10.

The opposing electrode 13 is typically a transparent electrode formed oftransparent conductive material. The opposing electrode 13 is disposedon a light-incidence surface of the photoelectric conversion layer 14.Accordingly, light transmitted through the opposing electrode 13 isincident on the photoelectric conversion layer 14. Light detected by theimaging device 100 is not limited to light in a visible-light wavelengthrange (e.g., the range of 380 nm to 780 nm). The “transparency” as usedherein means transmitting at least part of light in a wavelength rangeto be detected and does not necessarily have to transmit light in theentire visible-light wavelength range. Herein, electromagnetic wavesincluding infrared and ultraviolet are generally referred to as “light”,for the sake of convenience. For example, a transparent conducting oxide(TCO), such as indium tin oxide (ITO), indium zinc oxide (IZO),aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), stannicoxide (SnO₂), titanium dioxide (TiO₂), or zinc peroxide (ZnO₂), can beused for the opposing electrode 13.

In response to incident light, the photoelectric conversion layer 14generates hole-electron pairs. The photoelectric conversion layer 14 istypically formed of semiconductor material including organic material.The photoelectric conversion layer 14 may be amorphous silicon or may bequantum dots made of inorganic material.

As described above with reference to FIG. 1A, the opposing electrode 13is connected to the first voltage supply line 35 for sensitivitycontrol, the first voltage supply line 35 being connected to the firstvoltage supply circuit 30. Also, in this case, the opposing electrode 13is formed across the plurality of pixel cells 10. Accordingly, thevoltage Vito from the first voltage supply circuit 30 can be applied tothe plurality of pixel cells 10 through the first voltage supply line 35at a time. When a sensitivity control voltage having a desired magnitudecan be applied from the first voltage supply circuit 30, the opposingelectrode 13 may be separately provided for each pixel cell 10.Similarly, the photoelectric conversion layer 14 may be separatelyprovided for each pixel cell 10.

Controlling the potential at the opposing electrode 13 relative to thepotential at the pixel electrode 12 allows the pixel electrode 12 tocollect either holes or electrons of hole-electron pairs generated inthe photoelectric conversion layer 14 through photoelectric conversion.For example, when the holes are used as signal charge, making thepotential at the opposing electrode 13 higher than the potential at thepixel electrode 12 allows the pixel electrode 12 to selectively collectthe holes. A case in which the holes are used as signal charge will bedescribed below by way of example. Naturally, the electrons can also beused as signal charge.

When an appropriate bias voltage is applied between the opposingelectrode 13 and the pixel electrode 12, which opposes the opposingelectrode 13, the pixel electrode 12 collects one of positive andnegative charges generated in the photoelectric conversion layer 14through photoelectric conversion. The pixel electrode 12 is formed ofmetal, such as aluminum or copper, metal nitride, polysilicon givenconductivity by doping impurities, or the like.

The pixel electrode 12 may be a light-blocking electrode. For example,forming a tantalum nitride (TaN) electrode having a thickness of 100 nmas the pixel electrode 12 can achieve a sufficient light-blockingeffect. When the pixel electrode 12 is a light-blocking electrode, it ispossible to suppress or reduce incidence of light transmitted throughthe photoelectric conversion layer 14 on the impurity regions that serveas the channel regions, the source regions, or the drain regions of thetransistors formed at the semiconductor substrate 7. In the presentembodiment, for example, incidence of light on the amplifying transistor3, the address transistor 4, and the reset transistor 2 is suppressed orreduced. A light-blocking film may be formed in the interlayerinsulating layer 8 by using the above-described wiring layer 56.Suppressing or reducing incidence of light on the channel regions of thetransistors formed at the semiconductor substrate 7 can suppress orreduce, for example, variations in threshold voltages of thetransistors. Also, suppressing or reducing incidence of light on theimpurity regions formed in the semiconductor substrate 7 can suppress orreduce mixing of noise due to unintended photoelectric conversion in theimpurity regions. Thus, the suppression or reduction of light incidenceon the semiconductor substrate 7 contributes to improving thereliability of the imaging device 100.

As schematically illustrated in FIG. 3, the pixel electrode 12 isconnected to the gate electrode 3 g of the amplifying transistor 3 via aplug 52, a wire 53, and a contact plug 54. In other words, the gate ofthe amplifying transistor 3 has electrical connection with the pixelelectrode 12. The plug 52 and the wire 53 are formed of, for example,metal, such as copper. The plug 52, the wire 53, and the contact plug 54constitute part of the charge accumulation node FD. The wire 53 may be aportion of the wiring layers 56. The pixel electrode 12 is alsoconnected to the impurity region 2 d via the plug 52, the wire 53, and acontact plug 55. In the configuration illustrated in FIG. 3, the gateelectrode 3 g of the amplifying transistor 3, the plug 52, the wire 53,the contact plugs 54 and 55, and the impurity region 2 d, which is oneof the source region and the drain region of the reset transistor 2,serve as a charge accumulator in which signal charge collected by thepixel electrode 12 is accumulated.

A voltage corresponding to the amount of signal charge collected by thepixel electrode 12 and accumulated in the charge accumulator is appliedto the gate of the amplifying transistor 3. The amplifying transistor 3amplifies the applied voltage. The voltage amplified by the amplifyingtransistor 3 is selectively read via the address transistor 4 as a pixelsignal.

The interlayer insulating layer 8 includes the second voltage supplyline 25, which is connected to the second terminal 18 of the capacitorCA. Although FIG. 3 does not depict the capacitor CA, a specificconfiguration of the capacitor CA is not particularly limiting. Thecapacitor CA may have, for example, a metal-insulator-semiconductor(MIS) structure disposed in the interlayer insulating layer 8 or may bea depression-type MOS (DMOS) capacitor. Alternatively, the capacitor CAmay have a metal-insulator-metal (MIM) structure. When the MIM structureis employed, a larger capacitance value can be easily obtained.

[1.3 Sensitivity Characteristic of Photoelectric Converter 11]

Next, a description will be given of a sensitivity characteristic of thephotoelectric converter 11.

FIG. 4 is a graph illustrating one example of a photocurrentcharacteristic of each photoelectric converter 11 according to theembodiment. In FIG. 4, the horizontal axis represents the voltage Vitoapplied to each photoelectric converter 11. In FIG. 4, the range of thevoltage Vito is divided into voltage ranges R1, R2, and R3, for the sakeof convenience. The vertical axis represents the magnitude ofphotocurrent that is generated when a certain amount of light isincident for a certain period of time. In other words, the photocurrenton the vertical axis represents the sensitivity of the photoelectricconverter 11.

When the voltage Vito is in the voltage range R₁, almost no photocurrentflows. That is, in the voltage range R₁, the sensitivity of thephotoelectric converter 11 is substantially 0. When the voltage V1,which is the low-level voltage Vito, is set to a value in the voltagerange R₁, the sensitivity is substantially 0, and this characteristiccan thus be utilized for a shutter function. For example, when thevoltage Vito is set to 0 V, it is possible to obtain a state that is thesame as a state in which a physical shutter is closed.

When the voltage Vito is in the voltage range R₂, the amount ofphotocurrent increases as the voltage Vito increases. When the voltageVito is made variable in the voltage range R₂, the sensitivity of thephotoelectric converter 11 can be varied continuously or step-by-step.Also, the lower-limit voltage and the upper-limit voltage of the voltagerange R₂ have a difference that is larger than or equal to 1 V.

When the voltage Vito is in the voltage range R3, the photocurrent issubstantially saturated. When the voltage V3, which is a high-levelvoltage Vito, is set to a value in the voltage range R3, the sensitivityof the photoelectric converter 11 can be set to its highest sensitivity.During exposure with the voltage Vito in the voltage range R3, even whena potential difference applied to the photoelectric converter 11decreases as a result of an increase in the potential at the chargeaccumulation node FD owing to the signal charge, the sensitivity is lesslikely to decrease, making it possible to ensure linearity betweenilluminance and the amount of signal charge that is generated.

Also, other than changing the voltage Vito in an analog manner byutilizing the characteristics of the voltage range R₂, the voltage Vitocan also be digitally changed in order to make the sensitivity of thephotoelectric converter 11 variable. In this case, for example, pulsewidth modulation (PWM) can be used to digitally control the sensitivityof the photoelectric converter 11. That is, adjusting the ratio of thelow-level period of the voltage Vito and the high-level period thereofin an exposure period makes it easy to control the sensitivity.

[1.4 Potential Variations at Charge Accumulation Node FD Owing toVariations in Voltage Vito]

Now, a description will be given of potential variations at the chargeaccumulation node FD owing to variations in the voltage Vito applied tothe opposing electrode for sensitivity adjustment. In addition, thecapacitor CA illustrated in FIG. 1A has a function for cancelling orreducing voltage variations at the charge accumulation node FD owing tothe voltage Vito. This point will also be described in detail.

FIG. 1B is a diagram illustrating an equivalent circuit of thephotoelectric converter 11 in FIG. 1A. As illustrated in FIG. 1B, thephotoelectric converter 11 can be represented by a parallel circuit of aresistance component R₁, a capacitance component C1, and a diodecomponent D1. In this equivalent circuit, the photoelectric converter 11can be regarded as the capacitance component C1 under a bias conditionthat the amount of dark current in the photoelectric conversion layer 14is small, and forward current of the diode component D1 does not flow.In this case, a potential variation at the charge accumulation node FDowing to a variation in the voltage Vito is given by equation 1 below:

ΔVfd=(C1/(Cfd+CA+C1))ΔVito  (Equation 1)

In this case, ΔVito represents a potential variation in the voltageVito, that is, a difference (V3−V1) between the voltages V3 and V1. ΔVfdrepresents potential variations at the charge accumulation node FD. C1represents a capacitance component of the photoelectric converter 11,Cfd represents the capacitance value of parasitic capacitance at thecharge accumulation node FD, and CA represents the capacitance value ofthe capacitor CA.

Meanwhile, a potential variation at the charge accumulation node FDowing to the voltage VA applied to the second terminal 18 of thecapacitor CA connected to the charge accumulation node FD is given byequation 2 below:

ΔVfd=(CA/(Cfd+CA+C1))ΔVA  (Equation 2)

In this case, AVA represents the potential variation at the capacitorCA, that is, a difference (V2−V4) between the voltages V2 and V4.

Equations 1 and 2 cancel each other out when the sum of equations 1 and2 is zero, that is, when the condition given by equation 3 below issatisfied.

CA·ΔVA=−C1·ΔVito  (Equation 3)

The first voltage supply circuit 30 and the second voltage supplycircuit 21 set the voltages Vito and VA, respectively, so as to satisfyequation 3. However, equation 3 does not always have to be satisfied,and equation 3 may be satisfied in only a predetermined period. In thiscase, the predetermined period refers to a period in which the potentialvariation ΔVfd in equation 1 affects an image quality or pixel signals.The predetermined period includes, for example, a period in which pixelsignals and so on are read from the pixel cells 10 through the verticalsignal lines 19, a period in which the charge accumulation nodes FD arereset, and so on.

The voltage VA does not necessarily have to fully satisfy equation 3.For example, control may be performed so that the voltage VA is variedto the negative side when the voltage Vito varies to the positive side,and the voltage VA is varied to the positive side when the voltage Vitovaries to the negative side. In this case, since the electricalcharacteristics can also be brought close to the state in equation 3,influences on the image quality or the pixel signals can be reduced.

[1.5 Operation Example]

Next, a description will be given of an operation of the imaging deviceaccording to the first embodiment.

FIG. 5A is a time chart illustrating a reading operation example of theimaging device according to the first embodiment. In FIG. 5A, thehorizontal axis represents a time axis. Also, the reference control VseIindicates a waveform of the selection control signal VseI applied to thegate of the address transistor 4. The reset control signal Vrstindicates a waveform of the reset control signal Vrst applied to thegate of the reset transistor 2. The potential Vfd indicates a change inthe voltage at the charge accumulation node FD. In FIG. 5A, each perioddenoted by “accumulate” is a period for accumulating signal charge,generated by photoelectric conversion, in the charge accumulation nodeFD. The period is also called an accumulation period or an exposureperiod. A period denoted by “read” is a period for reading a signal fromthe pixel cell 10 to the column signal processing circuit 40. Thisperiod is also called a reading period. The reading period includes aperiod for resetting the potential at the charge accumulation node FD.In the drawings used in the following description, the periods denotedby “accumulate” and “read” represent periods that are analogous to thosedescribed above.

At time t0, the selection control signal VseI rises to thereby turn onthe address transistor 4. A period from t0 to t3 in which the addresstransistor 4 is in the on state is the reading period.

In a period from t0 to t1, a pixel signal corresponding to the amount ofsignal charge accumulated in the charge accumulation node FD is read.

At time t1, the reset control signal rises to thereby turn on the resettransistor 2. Thus, the potential at the charge accumulation node FD isreset to a reference potential Vref. The reference potential Vref is,for example, 0 V.

At time t2, the reset control signal falls to thereby turn off the resettransistor 2. In a period from t2 to t3, a reference signalcorresponding to the reference potential Vref is read. A differencebetween the pixel signal and the reference signal is a signalcorresponding to the amount of illumination light.

Now, a cause for the above-described problem will be described in detailwith reference to FIGS. 6 and 9A.

FIG. 6 is a time chart illustrating an operation example of an imagingdevice according to a comparative example. The example illustrated inFIG. 6 is intended for a pixel cell 10 that does not have aconfiguration for controlling the potential Vfd at the chargeaccumulation node FD. FIG. 6 illustrates an operation for four frames.The voltage Vito represents a voltage at the opposing electrode. Thepotential Vfd represents a potential at the charge accumulation node FDduring dark time, that is, in the absence of incident light, for ease ofunderstanding.

FIG. 9A is a view schematically illustrating captured images accordingto the comparative example. FIG. 9A illustrates a case in which thevoltage Vito at the opposing electrode when pixel signals are read is ahigh voltage in a first frame, is a low voltage in a second frame, andis a low voltage in a third frame, as illustrated in FIG. 6. Of imagesP1 to P3, the image P2 is generally dark compared with the images P1 andP3. That is, the image quality of the image P2 deteriorates. A cause forthe deterioration will be described with reference to FIG. 6.

In FIG. 6, the voltage Vito at the opposing electrode is a high voltagein the reading period of the first frame and is a low voltage in thereading period of the subsequent second frame. In this case, pixelsignals in the second frame are read when the voltage Vito at theopposing electrode is a low voltage.

However, the pixel signals in the second frame correspond to the amountof signal charge accumulated after being reset when the voltage Vito atthe opposing electrode is a high voltage in the first frame. Hence, whenpixel signals are read when the voltage Vito at the opposing electrodeis a high voltage, the values of true pixel signals are obtained.However, pixel signals that are read when the voltage Vito at theopposing electrode is a low voltage have smaller values than the valuesof true pixel signals.

Thus, when the voltage Vito at the opposing electrode in a readingperiod is changed from a high voltage to a low voltage between frames, aphenomenon in which an image becomes dark in the frame immediately afterthe change occurs.

In the third frame, which follows the second frame, such a phenomenondoes not occur when the voltage Vito at the opposing electrode is keptat the low voltage. This is because the voltage Vito at the opposingelectrode during immediately previous resetting and the voltage Vito atthe opposing electrode during the image-signal reading are the same.

As described above, when the voltage Vito at the opposing electrode in areading period is changed from a high voltage to a low voltage betweenframes, the phenomenon in which an image becomes dark in only the frameimmediately after the change occurs, as in FIG. 9A.

Conversely, when the voltage Vito at the opposing electrode changes fromthe low voltage to the high voltage between frames, a phenomenon inwhich an image becomes bright in only the frame immediately after thechange occurs.

Next, a description will be given of an operation example according tothe first embodiment. FIG. 5B is a time chart illustrating an operationexample of the imaging device according to the first embodiment. In FIG.5B, the horizontal axis represents a time axis. The vertical axisrepresents the voltage Vito for sensitivity control, an operation in theimaging device, and the voltage VA.

The voltage Vito indicates a waveform that changes between the voltageV3, which has a high level, and the voltage V1, which has a low level.The voltage VA indicates a waveform that changes between the voltage V2,which has a high level, and the voltage V4, which has a low level.

FIG. 5B illustrates an operation of the pixel cells 10 in one row whichare included in the plurality of pixel cells 10 in the imaging device.The operation illustrated in FIG. 5B includes five reading periods, thatis, is performed in five frames.

The reading periods include reading periods in which the voltage V3 isapplied to the opposing electrode and reading periods in which thevoltage V1 is applied to the opposing electrode.

A period from t0 to t1 in a reading period from t0 to t2 is a period inwhich pixel signals corresponding to the amount of signal chargeaccumulated in the charge accumulation nodes FD are read. At time t1,the reset transistor 2 resets the potential at the charge accumulationnode FD to the reference potential. In a period from t1 to t2, the resetpotential at the charge accumulation node FD, that is, a referencesignal corresponding to the reference potential at the reset level, isread. The same applies to other reading periods, such as a readingperiod from t10 to t12.

In each accumulation period, the ratio of a high-level period in whichthe voltage Vito is set to the voltage V3 versus a low-level period inwhich the voltage Vito is set to the voltage V1 is adjusted to therebyadjust the sensitivity. For example, in an accumulation period from t2to t10, the ratio of the first-half low-level period versus thelast-half high-level period is about half and half, and the sensitivityis about 50%. In other accumulation periods, the sensitivity is alsoadjusted using the ratio of the low-level period versus the high-levelperiod.

The voltage VA is controlled in the following manner. In each readingperiod, when the first voltage supply circuit 30 supplies the voltageV1, which has a low level, as the voltage Vito, the second voltagesupply circuit 21 supplies the voltage V2, which has a high level, asthe voltage VA. Also, in each reading period, when the first voltagesupply circuit 30 supplies the voltage V3, which has a high level, asthe voltage Vito, the second voltage supply circuit 21 supplies thevoltage V4, which has a low level, as the voltage VA.

In other words, in each reading period, the voltage VA is controlled soas to have an opposite phase relationship with the voltage Vito. In eachof the five reading periods in FIG. 5B, the opposite phase relationshipis satisfied. This makes it possible to satisfy equation 3 noted aboveor to bring the electric characteristics close to the state in equation3. Thus, it is possible to cancel or reduce potential variations at thecharge accumulation node FD. Each reading period is one example of theabove-described predetermined period, that is, a period in which thepotential variations ΔVfd in equation 1 affect the image quality orpixel signals.

For example, when the voltage Vito is changed in the present readingperiod relative to the previous reading period in the previous frame,the second voltage supply circuit 21 also changes the level of thevoltage VA in order to satisfy the opposite phase relationship in eachreading period.

In each of the second, third, and fifth reading periods of the readingperiods illustrated in FIG. 5B, since the voltage Vito is changedrelative to that in the previous reading period, the voltage VA is alsochanged so as to have a phase opposite to the voltage Vito. In thefourth reading period, since the voltage Vito is the same as that in theprevious reading period, the voltage VA maintains a phase opposite tothe voltage Vito and is thus not changed.

Next, a description will be given of a timing at which the voltage VA ischanged.

For example, in order for the voltage VA to satisfy the opposite phaserelationship with the voltage Vito in each reading period, the voltageVA may be changed in a period from when the previous reading period iscompleted until the present reading period is started. This period is,for example, the accumulation period from t2 to t10.

More specifically, the voltage VA may be changed in a period from whenthe outputting of the reference signal in the previous reading period iscompleted until immediately before the start of outputting of the pixelsignal in the present reading period. FIG. 5B illustrates an example inwhich the voltage VA is changed immediately before the reading period.This change can be performed for each row.

Also, the voltage Vito can be changed a plurality of times in eachaccumulation period. In contrast, the number of changes in the voltageVA may be one in each accumulation period.

It should be noted that the high level and the low level of each of thevoltages Vito and VA mean a relative magnitude relationship and do notmean absolute values. That is, the high level of the voltage Vito may bea value different from the value of the high level of the voltage VA,and the low level of the voltage Vito may be a value different from thevalue of the low level of the voltage VA.

Next, for comparison with the first embodiment, an operation of theimaging device according to the comparative example will be described inmore detail with reference back to FIG. 6.

As illustrated in FIG. 6, when the voltage Vito is changed from the lowlevel to the high level at time t3, the potential Vfd increases due tocoupling. Also, as in an accumulation period from t12 to t20 and in anaccumulation period from t22 to t30, the potential Vfd increases whenthe voltage Vito increases, and decreases when the voltage Vitodecreases.

In a reading period from t10 to t12, a pixel signal that exhibits highervalue than the actual value is read when the voltage Vito is at the highlevel. The reason is as follows. The potential Vfd at the chargeaccumulation node FD reaches the reference potential at time t1 and thenincreases due to coupling that occurs upon an increase in the voltageVito at the opposing electrode 13. The potential Vfd read between t10and t11 increases by an amount corresponding to that increase. After thepotential Vfd is reset at t11, the potential Vfd reaches the referencepotential that is the same potential at time t1, regardless of thepotential at the opposing electrode 13. Accordingly, since thedifference between the potential Vfd read between t10 and t11 and thepotential Vfd reset at t11 has a value corresponding to an increase inthe potential Vfd at the charge accumulation node FD owing to thecoupling, a brighter image than an actual image is acquired.

When the voltage Vito is at the low level at the reset timing at timet21, the potential Vfd indicating a signal level immediately before theresetting and the potential Vfd indicating the reference levelimmediately after the resetting have a large difference even in darktime. This difference occurs in all pixel cells in the same row. In thiscase, since the signal level takes a negative value smaller than thereference level, the signal level deviates from an analog-to-digital(A/D) conversion range, which can cause waveform deformation ordeterioration of pixel signals.

Next, an operation of the imaging device according to the firstembodiment will be described in comparison with FIG. 6.

FIG. 7 is a time chart illustrating an operation example of the imagingdevice according to the first embodiment. The imaging device accordingto the first embodiment differs from that in FIG. 6 in that the voltageVA is incorporated, as described with reference to FIG. 5B. FIG. 7 alsoillustrates an operation example during dark time.

As indicated by dotted frames in FIG. 7, the voltage VA is controlled soas to have a phase opposite to the voltage Vito in each reading period.This cancels or reduces potential variations at the charge accumulationnode FD which are caused by variations in the voltage Vito. As a result,the potential Vfd indicating a signal level immediately before resettingin each reading period and the potential Vfd indicating a referencelevel immediately after the resetting maintain an inherent state of darktime, that is, the same level.

Thus, in each reading period, the voltage VA is controlled so as to havean opposite phase relationship with the voltage Vito. In any of fourreading periods in FIG. 7, the opposite phase relationship is satisfied.This makes it possible to satisfy equation 3 noted above or to bring theelectric characteristics close to equation 3. Thus, it is possible tocancel or reduce potential variations at the charge accumulation nodeFD.

[1.6 Modification]

Next, a description will be given of a modification of the firstembodiment. In this modification, a description will be given of anexample in which the voltage Vito has multiple values larger than twovalues.

FIG. 8 is a time chart illustrating an operation example of the imagingdevice according to the modification of the first embodiment. FIG. 9illustrates a case in which the voltage Vito can take three values: ahigh level, a middle level, and a low level. FIG. 8 illustrates anoperation, the voltage Vito, the voltage VA, and the potential Vfd atthe charge accumulation node FD. The operation example illustrated inFIG. 8 is also an operation during dark time.

In each reading period, similarly to Vito, the voltage VA can take threevalues, as denoted by dotted frames. When Vito is at the middle level,the voltage VA is controlled to the middle level. With respect to thehigh level and the low level of the voltage VA, it is controlled so asto have a phase opposite to the voltage Vito. This makes it possible tocancel or reduce potential variations at the charge accumulation node FDin any of the reading periods.

[1.7 Advantages]

Next, a description will be given of advantages offered by the imagingdevice in the first embodiment.

FIG. 9B is a diagram schematically illustrating images captured by theimaging device according to the first embodiment.

FIG. 9B illustrates a case in which the voltage Vito at the opposingelectrode when pixel signals are read is at the high level in a firstframe, is at the low level in a second frame, and is at the low level ina third frame. In this case, in each reading period, the voltage VA isat the low level in the first frame, is at the high level in the secondframe, and is at the high level in the third frame.

Images P11 to P13 do not exhibit rapid brightness variations due topotential variations at the charge accumulation node FD, compared withthe images in FIG. 9A. That is, image-quality deterioration due tovariations in the voltage Vito at the opposing electrode is reducedsignificantly. Thus, the first embodiment offers an advantage ofreducing the image-quality deterioration due to a potential change atthe opposing electrode.

In the first embodiment, the voltage VA may be changed so as to satisfythe opposite phase relationship in synchronization with changes in thevoltage Vito. The voltage VA may be changed for all the rows at the sametime, not for each row.

Second Embodiment

In the present embodiment, an operation example for suppressing orreducing a sensitivity decrease and a saturation decrease in eachaccumulation period. Specifically, in each accumulation period, thesecond voltage supply circuit 21 supplies a voltage lower than that ineach reading period to the capacitor CA.

[2.1 Configuration of Imaging Device]

The configuration of an imaging device according to a second embodimentis the substantially the same as the configuration in the firstembodiment.

[2.2 Operation of Imaging Device]

FIG. 10 is a time chart illustrating an operation example of the imagingdevice according to the second embodiment. FIG. 10 illustrates anoperation in the pixel cells 10 in one row which are included in theplurality of pixel cells 10 in the imaging device or an operation in onepixel cell 10. The operation illustrated in FIG. 10 includes fivereading periods, that is, is performed in five frames.

The first voltage supply circuit 30 supplies the voltage V1 so that thesensitivity is zero except in a certain period in each accumulationperiod and supplies the voltage V3, which is higher than the voltage V1,only in the certain period in each accumulation period.

The second voltage supply circuit 21 supplies the voltage V2 in eachreading period and supplies the voltage V4, which is lower than thevoltage V2, in each accumulation period.

This operation can suppress or reduce a sensitivity decrease and asaturation decrease. The reason will be described with reference toFIGS. 11 and 12.

FIG. 11 is a time chart illustrating an operation example of an imagingdevice according to a comparative example. FIG. 11 is intended for pixelcells 10 that do not have a configuration for controlling the potentialsVfd at the charge accumulation nodes FD. In order to accentuatevariations due to the voltage Vito, the potential Vfd represents apotential at the charge accumulation node FD during dark time, that is,in the absence of incident light. Also, the state in which the voltageVito is at the low level is, for example, a state in which thesensitivity is zero, and light is not photoelectrically converted. Inthis state, the electronic shutter is closed. The state in which thevoltage Vito is at the high level is assumed to be a state in whichlight is photoelectrically converted.

The sensitivity of the photoelectric converter 11 depends on a potentialdifference applied to the photoelectric conversion layer 14, that is,depends on Vito-Vfd, and increases as the potential differenceincreases.

When the voltage Vito is set to the high level in one accumulationperiod, the potential Vfd also increases due to the coupling, asillustrated in FIG. 11. As a result, virtually, the potential differenceapplied to the photoelectric conversion layer 14 decreases, and thesensitivity decreases. Also, when the potential Vfd increases, there arecases in which the amount of saturated charge in the charge accumulationnode FD decreases.

In order to overcome such a problem, operations as illustrated in FIGS.10 and 12 are performed in the present embodiment.

FIG. 12 is a time chart illustrating an operation example of the imagingdevice according to the second embodiment. In FIG. 12, a prerequisite isalso the same as that in FIG. 10, and the potential Vfd represents apotential during dark time.

As illustrated in FIG. 12, in each reading period, the voltage Vito atthe opposing electrode 13 is the voltage V1, which has a low level. Ineach accumulation period, the voltage VA is set to the voltage V4, whichhas a low level, as denoted by a dotted frame. The voltage VA in eachreading period is the voltage V2, which has a high level and has a phasethat is opposite to the phase of the voltage Vito, as denoted by adotted frame.

According to the present embodiment, in each accumulation period, apotential difference applied to the photoelectric conversion layer 14,that is, Vito-Vfd, can be increased compared with FIG. 11. This makes itpossible to suppress or reduce a sensitivity decrease in thephotoelectric converter 11. Also, it is possible to suppress or reduce adecrease in the amount of saturated charge.

Third Embodiment

In a third embodiment, a description will be given of an operationexample for reducing leakage of signal charge in each accumulationperiod. Specifically, in each accumulation period, the second voltagesupply circuit 21 supplies a voltage higher than a voltage in eachreading period to the capacitor CA.

[3.1 Configuration of Imaging Device]

The configuration of an imaging device according to the third embodimentis the same as the configuration in the first embodiment.

[3.2 Operation of Imaging Device]

FIG. 13 is a time chart illustrating an operation example of the imagingdevice according to the third embodiment. FIG. 13 illustrates anoperation in the pixel cells 10 in one row which are included in theplurality of pixel cells 10 in the imaging device or an operation in onepixel cell 10. The operation illustrated in FIG. 13 includes fivereading periods, that is, is performed in five frames.

The first voltage supply circuit 30 supplies the voltage V3 except in acertain period in each accumulation period and supplies the voltage V1,which is lower than the voltage V3, in only the certain period in eachaccumulation period. The second voltage supply circuit 21 supplies thevoltage V4 in each reading period and supplies the voltage V2, which ishigher than the voltage V4, in each accumulation period.

According to the present embodiment, even when the voltage Vito variesto the low level temporarily in each accumulation period, leakage ofsignal charge can be suppressed or reduced. The reason will be describedwith reference to FIGS. 14 and 15.

FIG. 14 is a time chart illustrating an operation example of the imagingdevice according to the comparative example. FIG. 14 is intended forpixel cells 10 that do not have a configuration for controlling thepotentials Vfd at the charge accumulation nodes FD. In order toaccentuate variations due to the voltage Vito, the potential Vfdrepresents a potential at the charge accumulation node FD during darktime, that is, in the absence of incident light. Also, the state inwhich the voltage Vito is at the low level is, for example, a state inwhich the sensitivity is zero, and light is not photoelectricallyconverted that is, a state in which the electronic shutter is closed.The state in which the voltage Vito is at the high level is assumed tobe a state in which light is photoelectrically converted.

In each exposure period, when the voltage Vito at the opposing electrodereaches the low level temporarily, the potential Vfd at the chargeaccumulation node FD also decreases due to the coupling. In this case,as illustrated in FIG. 14, the potential Vfd may become lower than thereset level, which is a reference potential. When the reset level islow, a parasitic PN diode between the diffusion layer formed in thesemiconductor substrate as a part of the charge accumulation node FD andthe semiconductor substrate can shift from a reverse bias state to aforward bias state. This can cause leakage of signal charge accumulatedin the diffusion layer. As a result, there is a possibility that thewaveform of low-level pixel signals is deformed.

In order to overcome such a problem, operations as illustrated in FIGS.13 and 15 are performed in the present embodiment.

FIG. 15 is a time chart illustrating an operation example of the imagingdevice according to the third embodiment. In FIG. 15, a prerequisite isalso the same as that in FIG. 13, and the potential Vfd represents apotential during dark time.

As illustrated in FIG. 15, in each reading period, the voltage Vito atthe opposing electrode 13 is the voltage V3, which has a high level.Also, as denoted by a dotted frame, the voltage VA in each accumulationperiod is set to the voltage V2, which has a high level. The voltage VAin each reading period is the low-level voltage V4, which has a lowlevel and has a phase that is opposite to the voltage Vito, as denotedby a dotted frame.

According to the present embodiment, the possibility that the potentialVfd at the charge accumulation node FD becomes lower than the resetlevel, which is a reference potential, can be reduced in eachaccumulation period. This makes it possible to suppress or reducedeformation of the waveform of pixel signals. In addition, it is alsopossible to set the reset level to a lower level.

Fourth Embodiment

In a fourth present embodiment, a description will be given of anexample of the timing of changing the voltage Vito at the opposingelectrode. Specifically, the first voltage supply circuit 30 in thefourth embodiment changes the voltage Vito in an ineffective-pixelreading period in one frame period. In other words, the first voltagesupply circuit 30 does not change the voltage Vito in an effective-pixelreading period in one frame period.

[4.1 Configuration of Imaging Device]

The imaging device according to the fourth embodiment may be the same asthat of the first to third embodiments or may have a configuration asillustrated in FIG. 16. FIG. 16 is a block diagram illustrating aconfiguration example of the imaging device according to the fourthembodiment. Compared with FIG. 1, FIG. 16 differs in that the imagingdevice includes two vertical scanning circuits 20, not one verticalscanning circuit, and includes output selection circuits 41 a and 41 b,instead of the output selection circuit 41. The differences will bemainly described below.

The two vertical scanning circuits 20 each have substantially the sameconfiguration as the vertical scanning circuit 20 illustrated in FIG. 1Aand supply various control signals for each row from both left and rightsides of an imaging region 10A. This makes it possible to reduce a timedifference due to delays that occur at the left end and the right end ofthe imaging region 10A and enables higher-speed driving.

The output selection circuits 41 a and 41 b are circuits obtained bydividing the output selection circuit 41 in FIG. 1A into two circuits.For example, the output selection circuit 41 a corresponds toodd-numbered columns of all columns of the pixel cells 10, and theoutput selection circuit 41 b corresponds to even-numbered columns ofall the columns of the pixel cells 10. This makes it possible toincrease an output operation of pixel signals by a factor of two ormore.

The output selection circuits 41 a and 41 b may share operationassignments other than for the odd-numbered columns and theeven-numbered columns.

Next, a description will be given of a configuration example of theimaging region 10A.

FIG. 17A is a block diagram illustrating an arrangement example of aneffective-pixel region and an ineffective-pixel region according to thefourth embodiment. In FIG. 17A, the imaging region 10A includes anineffective-pixel region a0 and an effective-pixel region a1.

The ineffective-pixel region a0 is a region where ineffective pixels arearrayed. The ineffective pixels are formed as, for example, pixel cells10 where incident light is blocked by a light-blocking film and outputoptical black levels as pixel signals. Ineffective pixels and effectivepixels may be mixed in the ineffective-pixel region a0.

The effective-pixel region a1 is a region where effective pixels arearrayed. The effective pixels correspond to the pixel cells 10illustrated in FIG. 1A and output pixel signals in accordance with theamounts of incident light. No ineffective pixels are provided in theeffective-pixel region a1. In FIG. 17A, the ineffective-pixel region a0is arranged along four sides of the imaging region 10A so as to surroundthe entire periphery of the effective-pixel region a1.

FIG. 17B is a block diagram illustrating another arrangement example ofthe effective-pixel region and the ineffective-pixel region according tothe fourth embodiment. In FIG. 17B, the ineffective-pixel region a0 isarranged outside three sides of the effective-pixel region a1 and alongthree sides of the imaging region 10A.

[4.2 Operation of Imaging Device]

Next, a description will be given of an operation of the imaging deviceaccording to the present embodiment.

FIG. 18A is a diagram illustrating a reading operation example of theeffective-pixel region and the ineffective-pixel region according to thefourth embodiment. FIG. 18A schematically illustrates ineffective-pixelreading periods (Ri) and an effective-pixel reading period (Rv) in oneframe period.

In FIG. 18A, the ineffective-pixel reading periods (Ri) exist at a frontend and a rear end of one frame period, and one effective-pixel readingperiod (Rv) exists between the reading periods (Ri).

FIG. 18B is a diagram illustrating another reading operation example ofthe effective-pixel region and the ineffective-pixel region according tothe fourth embodiment. In FIG. 18B, an ineffective-pixel reading period(Ri) and an effective-pixel reading period (Rv) are repeated a pluralityof times in one frame period. In this case, for example, upon readingsome of the effective pixels, the imaging device suspends the reading,jumps to the ineffective pixels temporarily, and then resumes accessingthe effective pixel from the position where the reading was suspended.

Next, a description will be given of an example of the timing ofchanging the voltage Vito at the opposing electrode.

FIG. 19 is a diagram illustrating an example of the timing of changingthe voltage Vito at the opposing electrode according to the fourthembodiment. The first voltage supply circuit 30 changes the voltage Vitoin each ineffective-pixel reading period (Ri) in one frame period, asdenoted by dotted frames. Also, the first voltage supply circuit 30 doesnot change the voltage Vito in each effective-pixel reading period (Rv)in one frame period.

This makes it possible to suppress or reduce pixel signal variationsthat occur due to voltage variations at the opposing electrode 13.

Although the imaging device according to one or more aspects of thepresent disclosure has been described above in conjunction with theembodiments, the present disclosure is not limited to the particularembodiments. A mode obtained by making various variations conceived bythose skilled in the art to the embodiments and a mode constructed bycombining some of the constituent elements in different embodiments mayalso be encompassed by the scope of the one of more aspects, as long assuch modes do not depart from the spirit of the present disclosure.

What is claimed is:
 1. An imaging device comprising: a photoelectricconverter that includes a first electrode, a second electrode, and aphotoelectric conversion layer between the first electrode and thesecond electrode and that generates a signal charge; a chargeaccumulator that is connected to the first electrode to accumulate thesignal charge; a first voltage supply circuit that is connected to thesecond electrode and that selectively supplies at least two differentvoltages including a first voltage and a third voltage greater than thefirst voltage; and a second voltage supply circuit that is connected tothe charge accumulator via capacitance and that selectively supplies atleast two different voltages including a second voltage and a fourthvoltage less than the second voltage, wherein in a first period in whichthe first voltage supply circuit supplies the first voltage, the firstperiod being included in an accumulation period for accumulating thesignal charge in the charge accumulator, the second voltage supplycircuit supplies the second voltage.
 2. The imaging device according toclaim 1, further comprising: a capacitor that is connected between thesecond voltage supply circuit and the charge accumulator and thatfunctions as the capacitance.
 3. The imaging device according to claim1, wherein the signal charge is a hole.
 4. The imaging device accordingto claim 1, wherein the photoelectric converter has no sensitivity inthe first period.
 5. The imaging device according to claim 1, whereinthe second voltage supply circuit supplies the second voltage in theaccumulation period.
 6. The imaging device according to claim 1, whereinthe second voltage supply circuit supplies the fourth voltage in a resetperiod for resetting a voltage of the charge accumulator.
 7. The imagingdevice according to claim 1, wherein the first voltage supply circuitsupplies the third voltage in a second period that is different from thefirst period and that is included in the accumulation period.
 8. Animaging device comprising: a photoelectric converter that includes afirst electrode, a second electrode, and a photoelectric conversionlayer between the first electrode and the second electrode and thatgenerates a signal charge; a charge accumulator that is connected to thefirst electrode to accumulate the signal charge; a first voltage supplycircuit that is connected to the second electrode and that selectivelysupplies at least two different voltages including a first voltage and athird voltage less than the first voltage; and a second voltage supplycircuit that is connected to the charge accumulator via capacitance andthat selectively supplies at least two different voltages including asecond voltage and a fourth voltage greater than the second voltage,wherein in a first period in which the first voltage supply circuitsupplies the first voltage, the first period being included in anaccumulation period for accumulating the signal charge in the chargeaccumulator, the second voltage supply circuit supplies the secondvoltage.
 9. The imaging device according to claim 8, further comprising:a capacitor that is connected between the second voltage supply circuitand the charge accumulator and that functions as the capacitance. 10.The imaging device according to claim 8, wherein the signal charge is anelectron.
 11. The imaging device according to claim 8, wherein thephotoelectric converter has no sensitivity in the first period.
 12. Theimaging device according to claim 8, wherein the second voltage supplycircuit supplies the second voltage in the accumulation period.
 13. Theimaging device according to claim 8, wherein the second voltage supplycircuit supplies the fourth voltage in a reset period for resetting avoltage of the charge accumulator.
 14. The imaging device according toclaim 8, wherein the first voltage supply circuit supplies the thirdvoltage in a second period that is different from the first period andthat is included in the accumulation period.